Extended Chamber Matching and Repeatability Study for Chrome Etch

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原文链接

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外文摘要：Shrinking design rules， optical proximity correction and advanced phase shifting techniques require new methods of photomask manufacturing。 The Applied Materials Centura~(~R) photomask etch chamber leverages Applied Materials' extensive etch experience to provide an innovative dry etch solution to the mask dry etch challenges for < 0。13 μm device generations。 Repeatable， consistent， stable etch performance is critical for advanced mask manufacturing。 An extended chamber matching and repeatability study for chrome etch found that stable chrome and photoresist etch rates (and therefore selectivities) are produced on the Applied Materials Centura photomask etch chamber。 The etch responses are consistent mask to mask as well as chamber to chamber。 Prior to the extended study， pumping efficiencies， RF source and bias calibrations and optical emission spectral responses were compared。 Since the study was performed at several different sites， the metrology tools were calibrated using masks specifically designed for this purpose。 The marathon testing illustrates the stable etch performance over time。

外文关键词：

cr etchoptical emission spectroscopyOESendpoint detectionphotomask etchchromeplasma etch

作者：

Yi-Chiau Huang、Melisa Buie、Brigitte Stoehr、Alex Buxbaum、Guenther Ruhl

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作者单位：

Applied Materials, Sunnyvale, CA 94086

会议名称：

Annual BACUS symposium on photomask technology;BACUS symposium on photomask technology

会议地点：

Monterey, CA(US);Monterey, CA(US)

会议母体文献：

21st Annual BACUS Symposium on Photomask Technology Oct 3-5, 2001, Monterey, USA

页码：

p.624-632

出版时间：

2001