首页|Coupled Multiphysics Modeling of Semiconductor Lasers

Coupled Multiphysics Modeling of Semiconductor Lasers

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Comprehensive models of semiconductor lasers are required to predict realistic behavior of various laser devices for the spatially nonuniform gain that results due to current crowding。 Nonuniform gain has visible effect on laser dynamics and parameters, like threshold gain。 Consistent solution of coupled electrical, thermal, gain and optical problems was achieved by CFD-ACE+ integrated solver。 Integration of multiphysics into a single computational environment allowed for high-efficiency, high-fidelity modeling of modern semiconductor lasers, including vertical-cavity surface-emitting lasers (VCSELs) and edge-emitting lasers (EELs)。 This paper shows a full self-consistent coupling of the most-advanced-physics models of spatially dependent current flow, temperature effects, gain, and optical modes development and competition。 Three coupled modules: Semiconductor Device, Thermal, and Optics, of CFD-ACE+ general purpose multiphysics software, are used in the present study。

semiconductor lasersVCSELscomputational modeling

Z. Sikorski、Y. Jiang、T. Czyszanowski、A. Przekwas、M. Turowski

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CFD Research Corporation, 215 Wynn Drive, Huntsville, Alabama 35805, USA

2003 Nanotechnology Conference and Trade Show Nanotech 2003 Vol.2

San Francisco, CA(US);San Francisco, CA(US);San Francisco, CA(US);San Francisco, CA(US);San Francisco, CA(US);San Francisco, CA(US);San Francisco, CA(US);San Francisco, CA(US)

2003 Nanotechnology Conference and Trade Show Nanotech 2003 Vol.2 Feb 23-27, 2003 California, USA

p.36-39

2003