We report on new 3C-SiC material obtained by direct conversion of a standard 2-inch Si wafer into SiC。 The conversion technique is complex but， after proper optimization， will permit to develop new generations of low cost SiC substrates for electronics and nitride optoelectronics applications。
bulk 3C-SiC
A. Leycuras、O. Tottereau、P. Vicente、L. Falkovsky、P. Girard、J. Camassel
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CNRS, Centre de Recherche sur l'Heteroepitaxie et ses Applications, Rue Bernard Gregory, FR-06560 Valbonne, France
Silicon Carbide and Related Materials 2001 Pt.1
Tsukuba(JP);Tsukuba(JP)
International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan
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