Hydrogen Sensing Characteristics of High Electron Mobility Transistor with a Catalytic Pd Metal

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外文摘要：In this work， the comprehensive study of an interesting Pd/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) based hydrogen sensor is implemented。 The theoretical analysis and simulation are made by using a two-dimensional simulator Medici。 In addition， a practical device is fabricated successfully。 Based on the variations of the catalytic metal work function， the DC characteristics of experimental and simulated results are compared and studied。

外文关键词：

HFET(NH_4)_2S_Xsulfur treatmenttemperature-dependent characteristics

作者：

K. W. Lin

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作者单位：

Department of Electrical Engineering, Chien Kuo Technology University, No. 1, Chieh Sou North Road, Changhua, TAIWAN, Republic of China

会议名称：

THERMEC 2006 pt.5; Materials Scinece Forum; vols.539-543

会议地点：

Vancouver(CA)

会议母体文献：

International Conference on Proceeding & Manufacturing of Advanced Materials; 20060704-08; Vancouver(CA)

页码：

P.5025-5030

出版时间：

2006