Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis

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外文摘要：Impurity atoms in a high-purity semi-insulating 4H-SiC substrate fabricated by sublimation and an n-type 3C-SiC substrate fabricated by Chemical Vapor Deposition (CVD) were evaluated by neutron activation analysis。 Cr， Fe， Zn， As， Br， Mo， Sb， Eu， Yb， Hf， Ta， W and Au atoms were detected in the 4H-SiC fabricated by sublimation。 In the 3C-SiC fabricated by CVD， Cr， Zn， As， Br， Mo， Sb， La Sm and Hf atoms were found。 The concentration of these atoms tends to decrease with increasing atomic number。

外文关键词：

neutron activation analysis (NAA)impurity atoms

作者：

T. Ohshima、O. Tokunaga、M. lssiki、F. Sasajima、H. ltoh

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作者单位：

Quantum Beam Science Directorate, Japan Atomic Energy Agency, Gunma 370-1292, Japan

Radiation Application Development Association, Ibaraki 319-1106, Japan

Tokai Research and Development Center, Japan Atomic Energy Agency, Ibaraki 319-1195, Japan

会议名称：

Silicon Carbide and Related Materials 2006

会议地点：

Newcastle upon Tyne(GB)

会议母体文献：

European Conference on Silicon Carbide and Related Materials(ECSCRM 2006); 200609; Newcastle upon Tyne(GB)

页码：

P.457,460

出版时间：

2006