SILICON SOLAR CELLS WITH BORON BACK SURFACE FIELD FORMED BY USING BORIC ACID

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外文摘要：This paper presents a novel boron diffusion process using nontoxic boric acid solution as a boronsource to form a boron back surface field (BSF). It is shown that the boric acid provides excellent BSF quality andhigh bulk lifetimes when combined with a proper dielectric passivation. Boron emitters with a sheet resistance of～100 Ω/sq have been obtained by diffusion at 925 ℃ for 60 min. SiO_2-based dielectric passivation of the boronemitter yields J_(oe) values of ～100 fA/cm~2. The effective bulk lifetime of completed cells are measured to be > 500 μsin 1.3 Ωcm p-type FZ wafers. Cell efficiency up to 19.2 % has been achieved on 2×2cm~2 cells with the phosphorusemitter and the boron BSF formed with phosphoric acid and boric acid, respectively.

外文关键词：

boric acidsiliconboron

作者：

D.S.Kim、A.Das、K. Nakayashiki、B.Rounsaville、V.Meemongkolkat、A.Rohatgi

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作者单位：

Georgia Institute of Technology, School of Electrical and Computer Engineering 777 Atlantic Drive, Atlanta, GA, 30332-0250 USA Phone: 404-894-4041, Fax: 404-894-4832, e-mail: donskim@ece.gatech.edu

Georgia Institute of Technology, School of Electrical and Computer Engineering 777 Atlantic Drive, Atlanta, GA, 30332-0250 USA

Georgia Institute of Technology, School of Electrical and Computer Engineering 777 A

会议名称：

European photovoltaic solar energy conference

会议地点：

Milan(IT)

会议母体文献：

The compiled state-of-the-art of PV solar technology and deployment

页码：

p.1730-1733

出版时间：

2007