首页|COMPARISON OF POST-IMPLANT ANNEALING BEHAVIOR BETWEEN CONTINUOUS FLUX ION IMPLANTATION AND PULSED ION IMPLANTATION FOR SOLID PHASE EPITAXIAL RE-GROWTH APPLICATIONS
COMPARISON OF POST-IMPLANT ANNEALING BEHAVIOR BETWEEN CONTINUOUS FLUX ION IMPLANTATION AND PULSED ION IMPLANTATION FOR SOLID PHASE EPITAXIAL RE-GROWTH APPLICATIONS
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NETL
Intevac ENERGi? utilizes a continuous flux ion implantation technique and active substrate coolingto create a distinct junction profile and implant-induced amorphous layer。 It was experimentally demonstrated thatthe “pulsed” ion implantation techniques used by beamline ion implantation and plasma immersion ion implantationsuffer from end-of-range defects。 This report also studied dopant activation by various thermal anneal schemesincluding a simulated firing furnace anneal， and showed a possibility of using the firing furnace annealing as a soleimplant annealing process as a result of the mechanism of solid phase epitaxial re-growth (SPER)。 J_(0e) data showedthat the defect free re-crystallization achieved by continuous flux implantation and active wafer cooling forms highquality emitters。
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