VLS growth of silicon nanowires in cold wall Cat-CVD chamber

扫码查看

原文链接

NETL

外文摘要：Growth of silicon nanowires by Vapour-Liquid-Solid (VLS) method has been studied in a cold wall Catalytic Chemical Vapour Deposition (Cat-CVD) chamber。 It has been found that the instrument can be used in two modes， Hot Wire Chemical Vapour Deposition (HWCVD) and Chemical Vapour Deposition (CVD)。 These modes are tested with two methods for the preparation of the catalyst nanoparticles， namely thermal annealing of catalyst thin film and chemical attachment of catalyst nanoparticles。 Growth in HWCVD mode is faster but the nanowires have deformities like conical shape， short length and uncatalyzed silicon deposition on the substrate。 Using the CVD mode with modified process parameters solves these problems。 The resultant silicon nanowires are characterized by Scanning Electron Microscopy， Energy-dispersive X-ray spectroscopy and Transmission Electron Microscopy。

外文关键词：

Cat-CVDSilicon nanowireVapour-Liquid-Solid (VLS) method

作者：

Acharya, Sanchar、Kottantharayil, Anil

展开 >

作者单位：

Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai, India

会议名称：

International Conference on Emerging Electronics

会议地点：

Bangalore(IN)

会议母体文献：

2014 IEEE 2nd International Conference on Emerging Electronics

页码：

1-4

出版时间：

2014

DOI：

10.1109/ICEmElec.2014.7151169