A comprehensive study of the short-circuit characteristics of SiC MOSFETs

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外文摘要：The short-circuit capability of power devices is one of the key issues that related to the reliability and safety of Silicon Carbide (SiC) power devices。 Firstly， two types of short-circuit faults are introduced， and mechanism of short-circuit current is analyzed in detail。 Then， the influence of different circuit parameters on characteristics of SiC MOSFET under short-circuit condition is analyzed and compared。 The key factors influencing the short-circuit characteristics are further revealed， providing a guidance for designing short-circuit protection circuit of SiC MOSFET to some extent。

外文关键词：

Silicon carbideMOSFETResistanceLogic gatesShort-circuit currentsCircuit faultsJunctions

作者：

Haihong Qin、Yaowen Dong、Kefeng Xu、Huajuan Xu、Dafeng Fu、Shishan Wang、Chaohui Zhao

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作者单位：

Center for More Electric Aircraft Power System, Nanjing University of Aeronautics and Astronautics, Nanjing, China

Shanghai DianJi University, Shanghai, China

会议名称：

IEEE Conference on Industrial Electronics and Applications

会议地点：

Siem Reap(KH)

会议母体文献：

2017 12th IEEE Conference on Industrial Electronics and Applications

页码：

332-336

出版时间：

2017

DOI：

10.1109/ICIEA.2017.8282866