首页|Using optical emission spectroscopy (OES) to monitor In-line very high-frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique optoelectrical properties
Using optical emission spectroscopy (OES) to monitor In-line very high-frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique optoelectrical properties
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NETL
IEEE
In this paper using optical emission spectroscopy (OES) to monitor In-line very high-frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique optoelectrical properties。 In-line VHF-PECVD was developed by MIRDC (Metal Industries Research & Development Centre) in Taiwan。 In-line VHF-PECVD system with an electrode distance was 15 to 50 mm and electrode area of 1681 cm<sup xmlns:mml="http://www。w3。org/1998/Math/MathML" xmlns:xlink="http://www。w3。org/1999/xlink">2</sup>。 Due to the difference between the observation port and the plasma position。 Therefore， this paper developed an online VHF-PECVD internal optical system to verify the stability of the internal optical system。 The OES is a non-intrusive monitoring device that is widely used for real-time monitoring and stabilization devices for plasma monitoring。 This paper used OES to monitor the stability of processed silicon thin films。
In-line VHF-PECVDOESstability
Jia-Yan Lin、Cheng-Yuan Hung、Wei-Chen Tien、Hung-Wei Wu、Yung-Der Juang、Jia-Hao Lin、Shih-Kun Liu
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National University of Tainan, Tainan, Taiwan
Metal Industries Research & Development Centre, Kaohsiung, Taiwan
NETL
IEEE
