Electrical Characteristics of 400V Ultra-Thin SOI NLDMOS after Total Dose Irradiation

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外文摘要：The electrical characteristics variations of 400V SOI NLDMOS after exposure to total dose irradiation are discovered。 The mechanisms of these variations are analyzed and confirmed by TCAD simulations。

外文关键词：

Radiation effectsElectric fieldsImpact ionizationSemiconductor device measurementAnalytical modelsSilicon-on-insulatorElectric variables

作者：

Lei Shu、Yuan-Fu Zhao、Liang Wang、Tian-Qi Wang、Xin Zhou、Zhang-Yi’an Yuan、Kai Zhao、Ming-Xue Huo、Chao-Ming Liu、Guo-Liang Ma、Yan-Qing Zhang、Chun-Hua Qi、Ming Qiao、Wei-Ping Chen

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作者单位：

Harbin Institute of Technology, Harbin, P. R. China, 150001

Beijing Microelectronics Technology Institute, Feng-tai, Beijing, China, 100076

University of Electronic Science and Technology of China, Chengdu, P. R. China

会议名称：

International Conference on Radiation Effects of Electronic Devices

会议地点：

Chongqing(CN)

会议母体文献：

2019 3rd International Conference on Radiation Effects of Electronic Devices

页码：

1-4

出版时间：

2019

DOI：

10.1109/ICREED49760.2019.9205166