首页|A Compact Monolithic CMUT Receiver Front-End in a TiN-C CMOS-MEMS Platform
A Compact Monolithic CMUT Receiver Front-End in a TiN-C CMOS-MEMS Platform
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NETL
In this work， a compact monolithic integrated capacitive micromachined ultrasonic transducer (CMUT) receiver front-end is demonstrated based on the titanium nitride composite (TiN-C) CMOS-MEMS platform to attain a small transduction gap of 400nm for efficient electrostatic transduction。 The proposed CMUT front-end was designed in a standard 0。35 μm CMOS which offers a possibility of vertically integrating MEMS structure with the on-chip circuitry。 Each CMUT sensing pixel is connected to a low noise amplifier (LNA)， which is fully integrated underneath the MEMS structure， forming a compact pixel size of only 200 μm by 200 μm。 The prototyped CMUT receiver front-end shows a center frequency of 2 MHz with a 6 dB fraction bandwidth of 89% immersed in water。 The LNA of each CMUT pixel possesses a gain of 15。7 dB and a 3 dB bandwidth of 21 MHz while only consumes 0。82 mW。 Moreover， the proposed CMUT front-end exhibits an optimal sensitivity of 4。78 mV/kPa while only operating at a dc-bias of 2。5V。 As a result， the proposed CMUT receiver with low power and low dc-bias is a promising candidate for mobile imaging applications that take full advantage of its high energy efficiency and small form factor。
NETL
