Active-Matrix Micro-LED Display using MoS

Active-Matrix Micro-LED Display using MoS_2 TFTs

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原文链接

NETL

外文摘要：The integration of transition metal chalcogenides， such as MoS_2， with Ⅲ-Ⅴ compound semiconductors has posed significant challenges in the implementation of two-dimensional materials in optoelectronics applications。 In this presentation， we propose a breakthrough method for directly growing molybdenum disulfide (MoS_2) on Ⅲ-Ⅴ compound semiconductors， compatible with a batch microfabrication process。 By synthesizing a thin film of MoS_2 on a gallium-nitride-based epitaxial wafer， we successfully developed a thin film transistor array。 In addition， we achieved seamless monolithic integration of the MoS_2 thin film transistor with micro-light-emitting-diode (micro-LED) devices， resulting in a state-of-the-art active-matrix micro-LED display。 This novel approach paves the way for promising heterogeneous integration， combining established semiconductor technology with emerging two-dimensional materials， ultimately enabling high-performance optoelectronic systems。

外文关键词：

micro-LEDtwo-dimensional materialstransition metal chalcogenidesmolybdenum disulfide

作者：

Jong-Hyun Ahn

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作者单位：

School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea

会议名称：

Conference on Light-Emitting Devices, Materials, and Applications

会议地点：

San Francisco(US)

会议母体文献：

Light-Emitting Devices, Materials, and Applications XXVIII

页码：

129060J.1-129060J.5

出版时间：

2024

DOI：

10.1117/12.3004040