Temperature Characteristics and Feasibility Study of Temperature-Sensitive Electrical Parameters under Short-Circuit Conditions for SiC MOSFETs

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外文摘要：To address the persistent challenge of thermal stress， the leading cause of SiC MOSFET failure， it is essential to enhance their field robustness and extend their lifespan through precise junction temperature prediction and timely fault protection。 Temperature-Sensitive Electrical Parameters (TSEPs) are commonly employed for temperature monitoring; however， they often face limitations such as low resolution and high detection difficulty， which can undermine the accuracy of temperature predictions。 Additionally， short circuits represent an extreme condition for temperature rise， and it is imperative to verify the stability of their indicators under high-temperature conditions。 This study investigates the temperature dependence of dynamic parameters in SiC MOSFETs under short-circuit scenarios。 By comparing TSEPs under normal and short-circuit conditions， a new TSEP is proposed， accompanied by the design of a novel data acquisition circuit for in-situ temperature prediction。 Furthermore， this study offers guidance for selecting short-circuit protection sensors， effectively preventing false triggers caused by temperature fluctuations。

外文关键词：

Temperature sensorsTemperature measurementMOSFETTemperature distributionTemperature dependenceSilicon carbideCircuitsThermal stressesThermal stabilityStress

作者：

Zekun Li、Bing Ji、Puzhen Yu、Kun Tan、Mohammed Arkate、Wenping Cao

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作者单位：

School of Engineering, University of Leicester, Leicester, UK

School of Electrical Engineering and Automation, Anhui University, Hefei, China

会议名称：

International Symposium on Electrical, Electronics and Information Engineering

会议地点：

Leicester(GB)

会议母体文献：

2024 International Symposium on Electrical, Electronics and Information Engineering

页码：

6-11

出版时间：

2024

DOI：

10.1109/ISEEIE62461.2024.00010