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Physica
North-Holland
Physica

North-Holland

0921-4526

Physica/Journal Physica
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    Optical, electrical and dielectric properties of mixed metal oxides derived from Mg-Al Layered Double Hydroxides based solid solution series (vol 626, 413367, 2022)

    Lahkale, R.Sadik, R.Elhatimi, W.Bouragba, F. Z....
    2页

    Electrophysical properties of compensated n-Germanium

    Gaidar, G. P.
    9页
    查看更多>>摘要:Measurements of the transverse magnetoresistance and the Hall effect of compensated n-Ge crystals in the weak and strong magnetic fields at liquid nitrogen temperature have been carried out. It was revealed that in crystals with a sufficiently high degree of compensation, the space charge regions play a significant role in the scattering of charge carriers, which cause an increase in the transverse magnetoresistance (with increasing H) and its linear dependence on H in the region of strong magnetic fields. It was shown that in sufficiently strongly compensated crystals, the scattering of current carriers by the space charge regions is practically isotropic. It was found that thermal annealing (350 degrees C; 60 h) of compensated oxygen-containing n-Ge, which significantly reduces the compensation degree due to the arising donor-type oxygen complexes, leads to a decrease in the slope of the field dependences of the transverse magnetoresistance in the quantizing magnetic fields.

    DFT study of Sb layers on the Mo(112) surface

    Yakovkin, I. N.Petrova, N., V
    5页
    查看更多>>摘要:Relativistic DFT calculations, performed for Sb layers adsorbed on the Mo (112) surface, have revealed a strong interaction of Sb adatoms with the surface. At low coverages, the layer is predicted to form a c (2 x 2) structure, while for a complete Sb monolayer the most favorable structure is the p (1 x 1), which forms despite a minor one-dimensional compressing of the layer in the direction along the Mo (112) surface furrows. This structure is favorable also for complete bilayer and 3-layer films, so that very thin Sb layers reproduce the furrowed structure of the Mo (112) surface. The adsorbed Sb layers cause a significant redistribution of the densities of states, which, however, does not increase enough at the Fermi level to produce any substantial metallization of the film. The spin-orbit coupling causes only minor changes in the band structure, while Sb layer on one face of the Mo (112) slab destroys the inversion symmetry of the adsorption system thus leading to the appearance of the Rashba-type splitting of the bands.

    The synthesis and resistivity of Pr1-xSrxNiO3(2) films deposited on SrTiO3 by the PA-CSD method

    Tu, LingxiaWen, ZhiweiCui, YajingZhao, Yong...
    6页
    查看更多>>摘要:The discovery of superconductivity in the nickelate has attracted intensive attention recently. Here, Pr1-xSrxNiO3 (x = 0-0.2) films on SrTiO3 was firstly synthesized by polymer-assisted chemical solution deposition. The structure characterization showed that the film has good c-axis orientation and smooth surface without obvious cracks. With increasing Sr doping content, the out-of-plane lattice constant c gradually increased. The metal-insulator transition of parent phase was suppressed by Sr doping and the metallic behavior for doped films was observed in the whole measured temperature range. Infinite-layer Pr1-xSrxNiO3 films were subsequently obtained via topological reduction by CaH2. However, the out-of-plane lattice constants c was obviously smaller than that of the superconducting Pr1-xSrxNiO3 thin films. The insulating behavior for all of films was consequently observed instead of superconductivity. These results indicated that the high crystallinity and subtle structure regularization may be very important for infinite-layer nickelate to accomplish superconductivity.

    Tunneling transport in open nitride resonant tunneling structures taking into account the acoustic phonons: An variational approach

    Boyko, IPetryk, M.
    10页
    查看更多>>摘要:Quantum-mechanical theory of tunneling transport through open nanostructures based on nitride semiconductors, taking into account the contribution of acoustic phonons, is proposed. A variational method taking into account the component of Hamiltonian due to the deformation potential of acoustic phonons at different temperatures is developed. On the basis of the developed theory the transmission coefficient of a two-barrier AlN/GaN resonant tunneling nanostructure, its electronic conductivity and tunneling current are calculated taking into account the impact of acoustic phonons. It was found that with the increase of temperature values the frequencies of quantum transitions between electronic quasistationary states increase, an increase in temperature from cryogenic to room values results in a shift of the tunneling current peak and a decrease in the maximum value of dynamic conductivity in almost seven times.