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材料科学技术（英文版）
材料科学技术（英文版）

胡壮麟

月刊

1005-0302

jmst@imr.ac.cn

024-83978208

110016

沈阳市沈河区文化路72号

材料科学技术（英文版）/Journal Journal of Materials Science & TechnologyCSCDCSTPCD北大核心EISCI
查看更多>>本刊简称《JMST》，（ISSN 1005-0302，CN 21-1315/TG）。1985年创刊。是中国科协主管，中国金属学会，中国材料研究学会和中国科学院金属研究所联合主办的国际性英文期刊，以“加强国际交流，扩大学术影响，服务经济建设”为办刊宗旨，刊登世界各国的具有创新性和较高学术水平的原始性论文，并设有物约综述、快报、简讯及国内外材料界杰出学者简介等栏目，内容包括金属材料、无机非金属材料、复合材料及有机高分子材料等。
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    Thermoelectric properties of heavily Co-doped β-FeSi2

    Jun ChengLu GanJiawei ZhangJinyang Xi...
    248-257页
    查看更多>>摘要：Element doping is a widely employed strategy to enhance the thermoelectric(TE)properties of various materials.β-FeSi2 is a promising low-cost high-temperature TE material with exceptional thermal stabil-ity;however,the doping limit of β-FeSi2 is usually very low,which limits the tunability of electrical and thermal properties.Recently,a high doping content of 0.16 in β-FeSi2 has been achieved by the introduc-tion of iridium(Ir),leading to the highest reported figure of merit(zT)of 0.6 in β-FeSi2.Motivated by the successful heavy doping with Ir,this work aims to explore element heavy doping in β-FeSi2 with cobalt(Co),a cheaper,more readily available dopant with a smaller atomic radius and closer electronegativity to iron(Fe).In this study,we successfully obtained a record-high doping content of 0.24 in Co-dopedβ-FeSi2 through a prolonged annealing process.Despite the absence of a substantial enhancement in the zT of Co-doped β-FeSi2 at high doping levels,with a maximum zT of 0.3 at 900 K in Fe0.92Co0.08Si2,we observed a transition in the carrier transport mechanism as a function of Co doping content,attributed to changes in the band structure.At a low Co doping content(x ≤ 0.12),Fe1-xCoxSi2 demonstrates dominant carrier transport via impurity levels within the band gap,exhibiting hopping conduction.As the Co dop-ing content increases(x＞0.16),the impurity levels overlap and form an impurity band,and the carrier transport turns into the impurity band conduction.The observed band conduction behavior of Fe1-xCoxSi2(x＞0.16)mirrors that of Ir-doped β-FeSi2,but Fe1-xCoxSi2 shows much lower mobility,which can be at-tributed to the localized feature of the impurity band introduced by the Co doping.Overall,this study provides insights into the heavy Co doping and its influence on the TE properties and carrier conduction mechanisms in β-FeSi2,helpful for the further development of this TE system.
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    Unraveling the complex infiltration and repairing behaviors in defect coatings

    Shuaiwei PengTianguan WangGuang HuangZhuofu Tang...
    258-269页
    查看更多>>摘要：Organic coatings are commonly used to protect the metals or alloys from corrosion.However,defects such as scratches or natural aging of the coating can induce unexpected diffusion paths for the corrosive media,so the wettability of repairing liquids and the selection of suitable repairing liquids are crucial.In this study,we systematically investigated the capillary impregnation phenomenon by using liquids with various surface tensions and glass capillaries with different surface energies.We utilized this regularity to instruct the defects repairing process.By using an ultra-depth field microscope,scanning electron mi-croscope,and electrochemical analysis,two kinds of repairing liquids,high surface tension liquid(HSTL)and low surface tension liquid(LSTL),were investigated for repairing man-made defects of coatings.Our results showed that the substrate and the surface energy of the liquids significantly influence the infil-tration of the repair liquid.By effectively leveraging the relationship between the repair liquid and the substrate,the repair agent can not only establish a uniform and dense repairing layer but also notably enhance the corrosion resistance of the defective coating.This study provides valuable insights into the repairing of coating defects,as well as liquids transportation,microfluidic chip design,and surface modi-fication of microporous materials.
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