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材料科学技术（英文版）
材料科学技术（英文版）

胡壮麟

月刊

1005-0302

jmst@imr.ac.cn

024-83978208

110016

沈阳市沈河区文化路72号

材料科学技术（英文版）/Journal Journal of Materials Science & TechnologyCSCDCSTPCD北大核心EISCI
查看更多>>本刊简称《JMST》，（ISSN 1005-0302，CN 21-1315/TG）。1985年创刊。是中国科协主管，中国金属学会，中国材料研究学会和中国科学院金属研究所联合主办的国际性英文期刊，以“加强国际交流，扩大学术影响，服务经济建设”为办刊宗旨，刊登世界各国的具有创新性和较高学术水平的原始性论文，并设有物约综述、快报、简讯及国内外材料界杰出学者简介等栏目，内容包括金属材料、无机非金属材料、复合材料及有机高分子材料等。
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    Broadband absorption of macro pyramid structure based flame retardant absorbers

    Hengda SunYing ZhangYue WuYue Zhao...
    228-238页
    查看更多>>摘要：Flame-retardant materials with good electromagnetic wave absorption play an increasingly important role in Over-the-Air(OTA)tests in microwave anechoic chambers.In this work,carbon nanotubes and ammo-nium polyphosphate(CNTs@APP)composite were prepared by crosslinking with the silane coupling agent(KH550).The flame retardancy is improved with the increase of APP.However,the microwave absorption performance(MAP)and processing difficulty changed greatly as well.Therefore,magnesium aluminum double-layer metal hydroxide(LDH)was obtained by coprecipitation method and processing into the coating,so as to realize flame retardancy which reaches the limiting oxygen index(LOI)of 24.8％and good MAP at the same time.Then,a high-frequency structure simulator(HFSSTM)was used to simulate the pyramid model to realize the broadband absorption,and the optimal parameter range was obtained,that is,when the total height of the material is 40 mm,the height of the base accounts for 1/5-1/3,and the tangent of the half top angle is near 1/5,which result in the best MAP.Finally,the broadband absorp-tion of 14.36 GHz(3.64-18 GHz)was realized when the base height is 1/3,and the broadband absorption of 14 GHz(4-18 GHz)can be realized under the condition of large-angle oblique incidence of 0°-60°.
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    A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction

    Yaning WangWanying LiYimeng GuoXin Huang...
    239-244页
    查看更多>>摘要：Memtransistor,a multi-terminal device that combines both the characteristics of a memristor and a tran-sistor,has been intensively studied in two-dimensional layered materials(2DLM),which show potential for applications in such as neuromorphic computation.However,while often based on the migration of ions or atomic defects in the conduction channels,performances of memtransistors suffer from the poor reliability and tunability.Furthermore,those known 2DLM-based memtransistors are mostly constructed in a lateral manner,which hinders the further increasing of the transistor densities per area.Until now,fabricating non-atomic-diffusion based memtransistors with vertical structure remains challenging.Here,we demonstrate a vertically-integrated ferroelectric memristor by hetero-integrating the 2D ferroelectric materials CuInP2S6(CIPS)into a graphite/CulnP2S6/MoS2 vertical heterostructure.Memristive behaviour and multi-level resistance states were realized.Essential synaptic behaviours including excitatory postsy-naptic current,paired-pulse-facilitation,and spike-amplitude-dependent plasticity are successfully mim-icked.Moreover,by applying a gate potential,the memristive behaviour and synaptic features can be effectively gate tuned.Our findings pave the way for the realization of novel gate-tunable ferroelectric synaptic devices with the capability to perform complex neural functions.
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    Unraveling structure evolution failure mechanism in MoS2 anode for improving lithium storage stability

    Guannan ZuShiyu XuChanghao WangHongyi Li...
    245-253页
    查看更多>>摘要：2H phase molybdenum disulfide(2H-MoS2)possesses the two-dimensional layered structure and high theoretical capacity,presenting excellent lithiation-delithiation property.However,the violent capacity decay within dozens of cycles still remains a great challenge due to lacking of in-depth failure mech-anism.Herein,a novel decay-recovery-decay failure phenomenon upon long-term cycles is reported for the first time,which originates from the slow size change of Mo nanoparticles(NPs).Decay stages are triggered by many irregular-shaped Mo NPs with the increasing size up to～15 nm,leading to prominent pseudocapacitance failure and capacity loss.Subsequent recovery stages are attributed to the pulveriza-tion of coarse Mo NPs through surface sulfurization and accompanying lithiation.To overcome the insta-bility issue,proper modifiers should be introduced to restrain the spontaneous growth of Mo NPs,such as aluminum oxide(Al2O3).The strong Mo-Al2O3 bond gradually"drags"Al2O3 fragments into the active material as the cycle continuously proceeds,resulting in the efficient refinement and the reversible con-version between Mo and MoS2.Therefore,the enhanced cycling stability and the capacity retention are successfully achieved.It is expected to provide a new insight into the energy storage of transition metal chalcogenide anode materials in rechargeable batteries.
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    Cold dwell behaviour of Ti6Al alloy:Understanding load shedding using digital image correlation and dislocation based crystal plasticity simulations

    Yi XiongNicolò GrilliPhani S.KaramchedBo-Shiuan Li...
    254-272页
    查看更多>>摘要：Digital image correlation(DIC)and dislocation based crystal plasticity simulation were utilised to study cold dwell behaviour in a coarse grain Ti-6Al alloy at 3 different temperatures up to 230℃.Strains ex-tracted from large volume grains were measured during creep by DIC and were used to calibrate the crystal plasticity model.The values of critical resolved shear stresses(CRSS)of the two main slip sys-tems(basal and prismatic)were determined as a function of temperature.Stress along paths across the boundaries of four grain pairs,three"rogue"grain pairs and one"non-rogue"grain pair,were deter-mined at different temperatures.Large load shedding was observed in one of the"rogue"grain pairs,where a stress increment during the creep period was found in the"hard"grain.A minor load shed-ding mechanism was observed in two non-typical"rogue"grain pairs,in which the plastic deformation is nonuniform inside the grains and geometrically necessary dislocations accumulate in the centre of the grains.At elevated temperatures,120℃was found to be the worst case scenario as the stress difference at the grain boundaries of these four grain pairs was found to be the largest among the three tempera-tures analysed.The origin of this critical temperature is debated in the literature and it is investigated for the first time in the present work by analysing the simultaneous effects of the geometrically necessary dislocations(GND)and the strain rate sensitivity(SRS)of the slip systems.The analysis shows that the combined effects of the peak SRS of both prismatic and basal slip systems at 80℃and of the increase of the spread of the GND distribution around the grain boundary at higher temperatures are the origin of the observed worst case scenario.
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