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中国物理B（英文版）
中国物理B（英文版）

欧阳钟灿

月刊

1674-1056

010-82649026 82649519

100080

北京603信箱

中国物理B（英文版）/Journal Chinese Physics　BCSCDCSTPCD北大核心EISCI
查看更多>>该刊与《物理学报》是中国物理学会主办的物理学英文和中文的综合性国际学术月刊。刊登物理学科领域中，国内外未曾公开发表的具有创新性的科学研究最新成果。内容包括物理学各领域的理论、实验技术及应用。两刊内容不重复。两刊以论文水平高、创新性强，发表速度快的特点，受到国内外物理学工作者的好评和关注。被国际著名的SCI等10种以上检索系统收录。曾多次被评为中国科学院优秀期刊一等奖，1999，2003，2005年荣获第一、第二和第三届国家期刊奖，2001年被国家新闻出版总署评为“中国期刊方阵”中的双高（高知名度、高学术水平）期刊。2001，2002，2003年两刊都评为百种中国杰出期刊。
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    Factors resisting protein adsorption on hydrophilic/hydrophobic self-assembled monolayers terminated with hydrophilic hydroxyl groups

    毛党新吴园燕涂育松
    603-611页
    查看更多>>摘要：The hydroxyl-terminated self-assembled monolayer(OH-SAM),as a surface resistant to protein adsorption,exhibits substantial potential in applications such as ship navigation and medical implants,and the appropriate strategies for de-signing anti-fouling surfaces are crucial.Here,we employ molecular dynamics simulations and alchemical free energy calculations to systematically analyze the factors influencing resistance to protein adsorption on the SAMs terminated with single or double OH groups at three packing densities(Σ=2.0 nm-2,4.5 nm-2,and 6.5 nm-2),respectively.For the first time,we observed that the compactness and order of interfacial water enhance its physical barrier effect,subsequently en-hancing the resistance of SAM to protein adsorption.Notably,the spatial hindrance effect of SAM leads to the embedding of protein into SAM,resulting in a lack of resistance of SAM towards protein.Furthermore,the number of hydroxyl groups per unit area of double OH-terminated SAM at Σ=6.5 nm-2 is approximately 2 to 3 times that of single OH-terminated SAM at Σ=6.5 nm-2 and 4.5 nm-2,consequently yielding a weaker resistance of double OH-terminated SAM towards protein.Meanwhile,due to the structure of SAM itself,i.e.,the formation of a nearly perfect ice-like hydrogen bond struc-ture,the SAM exhibits the weakest resistance towards protein.This study will complement and improve the mechanism of OH-SAM resistance to protein adsorption,especially the traditional barrier effect of interfacial water.
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    Coexisting fast-slow dendritic traveling waves in a 3D-array electric field coupled neuronal network

    魏熙乐任泽宇卢梅丽樊亚琴...
    612-625页
    查看更多>>摘要：Coexistence of fast and slow traveling waves without synaptic transmission has been found in hhhippocampal tissues,which is closely related to both normal brain activity and abnormal neural activity such as epileptic discharge.However,the propagation mechanism behind this coexistence phenomenon remains unclear.In this paper,a three-dimensional electric field coupled hippocampal neural network is established to investigate generation of coexisting spontaneous fast and slow traveling waves.This model captures two types of dendritic traveling waves propagating in both transverse and longitude directions:the N-methyl-D-aspartate(NMDA)-dependent wave with a speed of about 0.1 m/s and the Ca-dependent wave with a speed of about 0.009 m/s.These traveling waves are synaptic-independent and could be conducted only by the electric fields generated by neighboring neurons,which are basically consistent with the in vitro data measured experi-ments.It is also found that the slow Ca wave could trigger generation of fast NMDA waves in the propagation path of slow waves whereas fast NMDA waves cannot affect the propagation of slow Ca waves.These results suggest that dendritic Ca waves could acted as the source of the coexistence fast and slow waves.Furthermore,we also confirm the impact of cellular spacing heterogeneity on the onset of coexisting fast and slow waves.The local region with decreasing distances among neighbor neurons is more liable to promote the onset of spontaneous slow waves which,as sources,excite propa-gation of fast waves.These modeling studies provide possible biophysical mechanisms underlying the neural dynamics of spontaneous traveling waves in brain tissues.
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    Corrigendum to"Numerical studies of atomic three-step photoionization processes with non-monochromatic laser fields"

    卢肖勇王立德李云飞
    626-627页
    查看更多>>摘要：The Eq.(6)about the time correlation function of the chaotic field model is corrected,along with the corresponding statement.The enlargement factors of ρ33,B and ρion,B in the legends of Figs.2(b),2(c)and 2(d)are corrected.These corrections do not affect the conclusions of the work[Chin.Phys.B 31 063203(2022)].
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    Gate-field control of valley polarization in valleytronics

    张婷婷韩依琳张闰午余智明...
    前插1,1-11页
    查看更多>>摘要：Valleytronics materials are a kind of special semiconductors which can host multiple symmetry-connected and well-separated electron or hole pockets in the Brillouin zone when the system is slightly n or p doped.Since the low-energy particles residing in these pockets generally are not easily scattered to each other by small perturbations,they are endowed with an additional valley degree of freedom.Analogous to spin,the valley freedom can be used to process information,leading to the concept of valleytronics.The prerequisite for valleytronics is the generation of valley polarization.Thus,a focus in this field is achieving the electric generation of valley polarization,especially the static generation by the gate electric field alone.In this work,we briefly review the latest progress in this research direction,focusing on the concepts of the couplings between valley and layer,i.e.,the valley-layer coupling which permits the gate-field control of the valley polarization,the couplings between valley,layer,and spin in magnetic systems,the physical properties,the novel designing schemes for electronic devices,and the material realizations of the gate-controlled valleytronics materials.
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