Journal of Alloys and Compounds2022,Vol.8908.DOI:10.1016/j.jallcom.2021.161909

Optimized crystallization and defect passivation with Yttrium (III) doped MAPbBr3 film for highly efficient and stable hole-transport-layer-free carbon-based perovskite solar cells

Zhao X.-Z. Tai Q. Shi Y. Hou X. Li F. Zhang Q. Zhang X. Du Y. Liu P.
Journal of Alloys and Compounds2022,Vol.8908.DOI:10.1016/j.jallcom.2021.161909

Optimized crystallization and defect passivation with Yttrium (III) doped MAPbBr3 film for highly efficient and stable hole-transport-layer-free carbon-based perovskite solar cells

Zhao X.-Z. 1Tai Q. 2Shi Y. 1Hou X. 1Li F. 1Zhang Q. 1Zhang X. 2Du Y. 1Liu P.1
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作者信息

  • 1. Key Laboratory of Artificial Micro and Nano Structures of Ministry of Education School of Physics and Technology Wuhan University
  • 2. The Institute of Technological Sciences Wuhan University
  • 折叠

Abstract

The preparation of high-quality perovskite films with low defect density and long carrier lifetime is a precondition for achieving high-efficiency perovskite solar cells (PSCs). In this work, we successfully incorporated Y3+ ions into perovskite films to enhance the photovoltaic performance of hole-transport-layer-free (HTL-free) carbon-based MAPbBr3 PSCs in ambient atmosphere. The perovskite films exhibit better crystallinity, lower trap density, and longer carrier lifetime after the introduction of Y3+ ions. By optimizing the doping dosage, a maximal power conversion efficiency (PCE) of 8.313% (open-circuit voltage (VOC) = 1.562 V) is achieved for MAPb0.98Y0.02Br3 PSCs. Moreover, the unencapsulated device also shows remarkable long-term stability over 80 days under dry condition with 20–30% relative humidity (RH) at 20–25 °C, which even maintains 95% of its initial PCE when stored in harsh environment (80 °C and 40–70% RH) over 72 h.

Key words

Carbon electrode/High open-circuit voltage/Hole-transport-layer-free/Perovskite solar cells/Yttrium doping

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出版年

2022
Journal of Alloys and Compounds

Journal of Alloys and Compounds

EISCI
ISSN:0925-8388
被引量3
参考文献量81
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