Bipolar pulsed reactive magnetron sputtering of epitaxial AlN- films on Si (111) utilizing a technology suitable for 8 '' substrates
Neuhaus, Stefan 1Bartzsch, Hagen 1Cornelius, Steffen 1Pingen, Katrin 1Hinz, Alexander 1Frach, Peter1
扫码查看
点击上方二维码区域，可以放大扫码查看
作者信息
1. Fraunhofer Inst Organ Elect Electron Beam & Plasm
折叠
Abstract
This paper discusses the development of a reactive sputtering process for the deposition of epitaxially grown AlN films on Si(111) using a technology suitable for 8 '' substrates. X-ray diffraction (XRD) and rocking curves (RC) are used to determine the crystalline orientation. The influence of substrate temperature, target-substrate distance and target voltage on the full width at half maximum (FWHM) of the RC is investigated. The film deposition was performed on Si(111) wafers and on AlN-on-Si(111) templates prepared by metal organic chemical vapor deposition (MOCVD). Based on the sixfold symmetry identifiable in the pole figure of the AlN(302) plane reflections, oriented in-plane film growth on Si(111) was verified for the process. Best oriented films sputtered directly on Si(111) achieved for 500 nm AlN films featured a RC-FWHM of 0.93. of AlN(100) and 0.77. of AlN(002). Root mean square roughness (RMS) of the samples varied between 2.3 nm and 2.8 nm. The deposition rate was between 70 nm/min and 100 nm/min. Films deposited onto the MOCVD templates grew maintaining the crystalline quality of the MOCVD substrate, verified by the FWHM of the RC of in-plane and out-of-plane reflections.
NSTL
Elsevier