The effect of multiple scattering on 40 nm SRAM and 3D-SRAM single event upset
Based on the rectangular parallelepiped model,a 40nm SRAM device model was constructed in Geant4 for its single event upset simulation in this paper.σsat and LETth were 8.98×10-9 cm2·bit-1 and 0.084 MeV/(mg·cm-2),which were obtained through Weibull fitting based on simulation result.A stacked 3D-SRAM device was designed using 3D-IC method and constructed in Geant4,which could be used for SEU simulation.The results showed the protective effect of the upper unit on the lower unit in the same 3D-SRAM.By changing the high Z material in the overlayer,it was found that the high Z material could effectively reduce the multiple scattering at the end of the Fe-ion range,and Ta had a better performance than W.In the same 3D-SRAM,the lower unit(die3)had a smaller multiple scattering cross-section.
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