多重散射对40 nm SRAM和3D-SRAM单粒子翻转的影响
The effect of multiple scattering on 40 nm SRAM and 3D-SRAM single event upset
罗云龙 1李刚 2张宇3
作者信息
- 1. 安徽大学物质科学与信息技术研究院,安徽 合肥 230601
- 2. 安徽大学物理与光电工程学院,安徽 合肥 230601
- 3. 合肥工业大学物理学院,安徽 合肥 230601
- 折叠
摘要
基于RPP(rectangular parallelepiped)模型,利用Geant4软件包,构建了一个40 nm SRAM器件模型用于单粒子翻转效应模拟,通过Weibull函数拟合得到σsat和LETth分别为8.98 × 10-9 cm2·bit-1和0.084 MeV/(mg·cm-2).基于3D-IC技术设计了一种新的3D-SRAM器件,通过Geant4进行了建模和单粒子翻转模拟,结果表明,在同一 3D-SRAM器件中上层单元对下层单元有防护作用.通过改变覆盖层中的高Z材料,发现高Z材料可以有效地减少Fe离子在射程末端的多重散射,且Ta的效果优于W.在同一 3D-SRAM器件中,下层单元(die3)的多重散射截面峰值更低.
Abstract
Based on the rectangular parallelepiped model,a 40nm SRAM device model was constructed in Geant4 for its single event upset simulation in this paper.σsat and LETth were 8.98×10-9 cm2·bit-1 and 0.084 MeV/(mg·cm-2),which were obtained through Weibull fitting based on simulation result.A stacked 3D-SRAM device was designed using 3D-IC method and constructed in Geant4,which could be used for SEU simulation.The results showed the protective effect of the upper unit on the lower unit in the same 3D-SRAM.By changing the high Z material in the overlayer,it was found that the high Z material could effectively reduce the multiple scattering at the end of the Fe-ion range,and Ta had a better performance than W.In the same 3D-SRAM,the lower unit(die3)had a smaller multiple scattering cross-section.
关键词
Geant4/单粒子翻转/多重散射/3D-SRAMKey words
Geant4/single event upset/multiple scattering/3D-SRAM引用本文复制引用
出版年
2025
国家科技期刊平台
NSTL
万方数据