Reliability Analysis and Optimal Design of Half-bridge IGBT Hybrid Module Based on Finite Element Method
To avoid fatigue and failure within the module caused by excessive temperature and thermal stress, a finite element simulation model of half-bridge IGBT hybrid module composed of silicon-based IGBT and silicon carbide-based JBS was established. The chip arrangement, the thickness of each layer structure, and the materials of solder and ceramic substrate were changed to study the rules of junction temperature and maximum thermal stress changes, and optimization methods for module packaging were proposed. After the optimization, the junction temperature and maximum thermal stress of the optimized module decreased by 18℃ and 80.2 Mpa, respectively, which enhanced the reliability of the module.
IGBT hybrid modulejunction temperaturethermal stressfinite element methodpackage reliability
万方数据
维普
