六方氮化硼忆阻器的研究进展
Research Progress of Hexagonal Boron Nitride Memristor
王思博 1刘晓航 1陈占国1
作者信息
- 1. 吉林大学电子科学与工程学院,长春 130012
- 折叠
摘要
六方氮化硼是一种与石墨烯结构相似的材料,以六方氮化硼作为阻变介质层的忆阻器,具有良好的散热性能,不易发生介电击穿,能够实现小尺寸、低功耗和大的开关比;在计算机运算存储研究、人工神经网络和神经形态(即类脑)计算领域有极大的应用前景.文章主要介绍了忆阻器的分类,分析了六方氮化硼忆阻器的阻变机制,综述了六方氮化硼忆阻器的研究现状.最后,指出了六方氮化硼忆阻器当前面临的挑战,并展望了未来的发展方向.
Abstract
As a graphene-like structural material,hexagonal boron nitride(h-BN)possesses many superior properties.Owing to their enhanced qualities such as simple device structure,low power consumption,and good scalability potential,h-BN memristors are receiving increasing attention and are currently considered to hold great application prospects in the fields of computing and storage,artificial neural networks,and neuromorphic computing.In this paper,a classification of memristors is introduced,the resistive switching mechanism of the h-BN memristor is discussed,and the research status of the h-BN memristor is reviewed.Finally,the current challenges of the h-BN memristor are pointed out,and the paper concludes with an outlook of the future direction of development.
关键词
六方氮化硼/忆阻器/低维材料Key words
hexagonal boron nitride/memristor/low dimensional material引用本文复制引用
出版年
2024
NETL
NSTL
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