摘要
用高压水平温度梯度定向结晶技术合成了磷化铟(InP)多晶.分析了不同温度梯度对多晶配比度的影响,结果表明当温度梯度低于4 ℃/cm时,多晶呈明显富铟状态,配比度在97％以下;当温度梯度在5 ℃/cm以上时多晶致密、无铟夹杂,达到近化学配比状态,配比度达到99％以上.对多晶样品进行了霍尔测试和辉光放电质谱(GDMS)测试,合成的高配比度磷化铟多晶载流子浓度在8×1015 cm-3以下,迁移率在3 900 cm2·V-1·s-1以上,纯度达到99.999 99％以上.多晶中的杂质主要有Si,S,Fe,Cu,Zn,As等,分析了杂质的来源及其对材料性能的影响.
Abstract
Indium phosphide(InP)polycrystals were synthesized using the horizontal gradient-freeze method.The influence of different temperature gradients on the ratio of polycrystals was analyzed,The results show that the crystals are indium-rich with a ratio of less than 97％when the temperature gradient is lower than 4 ℃/cm,and the crystals are stoichiometric with a ratio of more than 99％when the temperature gradient is above 5 ℃/cm.The impurities and electrical properties of the polycrystalline samples were analyzed using glow discharge mass spectrometry(GDMS)and Hall tests.The purity of stoichiometric InP polycrystals was greater than 99.999 99％;the carrier concentration was less than 8 × 1015 cm-3;the mobility was greater than 3 900 cm2·V-1·s-1.The impurities in the polycrystals primarily included Si,S,Fe,Cu,Zn,and As.The sources of the impurities and their effects on the properties of the materials were analyzed.
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