High-reliability Bonding Process of Infrared Detector Chip
Gold-wire bonding is widely used in the packaging of infrared detectors.In this study,a 25 μm gold wire was selected to determine the best process parameters for bonding with respect to the tensile value of bonding strength based on the orthogonal experimental method.The combination of the ultrasonic process parameters of pressure,power,and time,with contact force was optimized,to improve electrical connection performance and connection strength of the bonded leads,thereby enhancing the signal transmission quality of the chip system.The combination of the wire bonding process parameters proposed in this study is applicable to the bonding of infrared detection chips.
gold wire bondinginfrared detectorultrasonic powercontact force
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