Effect of Common Point Defects in Silicon Cells on Device Response Characteristics
In this study,we investigated the effect of common point defects in silicon photocells on the response characteristics of devices under laser irradiation.We established a crystal cell model based on the first principles,compared the density of state values of silicon materials with Fe and Cu impurities,and analyzed the influence of common point defects on the response characteristics of silicon photocells.When the temperature of a photovoltaic cell changes after exposure to laser irradiation,its photoelectric response output characteristics alter owing to the sensitivity of a semiconductor material to temperature.Based on the principle of the light-generated electromotive force of a photovoltaic device,the response output model and one-dimensional thermal conduction equation were used to calculate the vacancy and impurity response characteristics under 1 064 nm laser irradiation.The results showed that both vacancies and metal impurities could change the band structure and response characteristics of silicon materials.Under a laser irradiation wavelength of 1 064 nm,the irradiation time was 1 μs,and power density was 4 X 105 W/cm2,where the gap atoms had the most dominant effects on the electronic structure and optical properties of the material.At this time,the absorption coefficient of the material was as high as 23 952 cm-1,and the quantum efficiency value was the largest,resulting in the strongest cell response and minimum output voltage.
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