Influence of Ionization Effect on Gain of Electron Multiplying Layer in EBCMOS
The Monte Carlo simulation method was employed to investigate the influence of ionization effects resulting from high-energy electrons bombarding a semiconductor in electron bombardment complementary metal-oxide-semiconductor(EBCMOS)imaging devices on both the charge collection efficiency and gain of the electron multiplying layer.Further,a theoretical analysis was conducted to examine the effects of incident electron energy,doping concentration in the p-type substrate layer,thickness of the electron multiplying layer,and passivation layer on the charge collection efficiency and gain of the multiplying layer.The analysis revealed that increasing the incident electron energy(up to 4 keV),reducing the thickness of both the electron multiplying and passivation layers,and lowering the doping concentration in the p-type substrate layer are all beneficial approaches to improve the charge collection efficiency and increase the multiplying layer gain to obtain high-gain EBCMOS devices.
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