1000 V 4H-SiC VDMOS结构设计与特性研究
Structure Design and Characteristics Research of 1 000 V 4H-SiC VDMOS
李尧 1牛瑞霞 1王爱玲 1王奋强 1蓝俊 1张栩莹 1张鹏杰 1刘良朋 1吴回州1
作者信息
- 1. 兰州交通大学电子与信息工程学院,兰州 730070
- 折叠
摘要
设计并优化了一种基于4H-SiC的1 000 V垂直双扩散金属氧化物半导体场效应晶体管(VDMOS),在留有50％的裕度后,通过Silvaco仿真软件详细研究了器件各项参数与耐压特性之间的关系.经优化,器件的阈值电压为2.3 V,击穿电压达1 525 V,相较于相同耐压条件下的Si基VDMOS,4H-SiC VDMOS的击穿电压提升了 12％.此外,击穿时4H-SiC VDMOS表面电场分布相对均匀,最大值为3.4×106 V/cm.终端有效长度为15μm,约为Si基VDMOS的6％,总体面积减小了近1/10.并且4 H-SiC VDMOS结构简单,与相同耐压条件下的Si基VDMOS相比,未增加额外的工艺步骤,易于实现.
Abstract
This study focuses on designing and optimizing a 1 000 V vertical double-diffusion metal oxide semiconductor(VDMOS)field-effect transistor using 4H-SiC.Leveraging Silvaco simulation software,we comprehensively investigate the relationship between device parameters and withstand voltage characteristics,aiming for a 50％margin.Following optimization,the device achieves a threshold voltage of 2.3 V,with the breakdown voltage reaching 1 525 V.Compared with an Si-based VDMOS under identical withstand voltage conditions,the breakdown voltage of the 4H-SiC VDMOS increases by 12％.Notably,the surface electric field distribution of the 4H-SiC VDMOS during breakdown remains relatively uniform,with a maximum value of 3.4X 106 V/cm.The effective terminal length measures at 15 μm,approximately 6％that of an Si-based VDMOS,with the overall area reducing by nearly 1/10.Furthermore,the structure is simpler compared to that of the 4H-SiC VDMOS under identical withstand voltage conditions.It involves no additional process steps,thus facilitating easy device fabrication.
关键词
4H-SiC/垂直双扩散金属氧化物半导体场效应晶体管/击穿电压/漂移区参数/沟道长度Key words
4H-SiC/VDMOS/breakdown voltage/drift zone parameters/channel length引用本文复制引用
基金项目
国家自然科学基金项目(61905102)
国家自然科学基金项目(62264008)
兰州市青年科技人才创新项目(2023-QNQ-119)
出版年
2024
NETL
NSTL
万方数据