Quartz tapered sidewall etching using a two-step etching method was studied based on photoresist modification technology. First,the vertical sidewall of the photoresist was modified to a tapered profile using Ar/O2/CF4 plasma. Then,the tapered sidewall of the photoresist was transferred to quartz using the same etching chamber. The influences of gas flow,etching power,temperature,and etching time on the etching rate,selectivity,and morphology during the photoresist modification process were studied in detail. A tapered quartz profile with a sidewall angle of 60° and a smooth surface was prepared by optimizing the process parameters. This work provides a helpful guideline for the tapered sidewall etching of SiO2,as well as other materials.
关键词
石英/光刻胶修正/反应离子刻蚀/倾斜侧壁
Key words
quartz/photoresist modification/reactive ion etching/tapered sidewall
维普
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