Study on the Improvement of Facet Characteristics of High-Power Semiconductor Lasers
To address the instability of the front cavity surface under high current,which can lead to catastrophic optical mirror damage (COMD),a semiconductor laser with a dual-zone electrode structure was proposed. This study investigated the COMD threshold,peak power,threshold current,spectral stability,and kink effect of this laser structure. Under the same process conditions,the COMD threshold,peak power,threshold current,and wavelength redshift rate of semiconductor lasers with a single-electrode structure and dual-zone electrode structure were tested. The results showed that,under the same process conditions,with a threshold current of 80mA in the main gain region,the threshold current of the laser with the dual-zone electrode structure was reduced by 20％. When driven by a 15mA current in the window region,compared to the single-electrode semiconductor laser,the semiconductor laser with the dual-zone electrodes could increase the COMD threshold by 13％,increase the peak power by 12％,and decrease the wavelength redshift while improving the kink effect.
red semiconductor lasershigh poweratastrophic optical damagedual-zone electrodes
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