Low-Temperature Stability of Preamplifier Circuits for HgCdTe Infrared Detectors
In aerospace applications,a HgCdTe infrared detector preamplifier circuit yields the normal output at room temperature;however,it exhibits oscillations when the temperature is reduced to-55 ℃,and these oscillations intensify when infrared light is irradiated to the detector. In this study,this phenomenon is systematically investigated for the first time,and an equivalent circuit model of a HgCdTe infrared detector circuit after low-temperature irradiation is presented. The mechanism of the oscillation of the preamplifier circuit at low temperature is analyzed in terms of phase and gain margins. Based on the analysis,a solution is proposed to inhibit the oscillation of the preamplifier circuit after illumination at low temperatures. The validity of the method is confirmed experimentally.
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