首页|Aluminum Nitride Films Fabricated by Mid-frequency Magnetron Sputtering

Aluminum Nitride Films Fabricated by Mid-frequency Magnetron Sputtering

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Aluminum nitride films were prepared by mid-frequency magnetron sputtering on Si (111)substrate. The grown films were characterized by X-ray diffraction(XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy(XPS) to obtain the structural and the chemical information. The polycrystalline thin films were in a hexagonal wurtzite structure having a (002) preferred orientation, along which the columnar grain structure was found. XPS study revealed the presence of oxygen and carbon contaminations, as well as the Al-rich nature of the film. Anomalous C-V characteristics of Al/AIN/n-Si capacitors were studied. The measured C-V curves show rolloffs in the accumulation region and voltage stresses cause both horizontal and vertical shifts of the C-V curves. These anomalous behaviors are mainly due to the large current conduction and the charge trapping in the Al-rich AlN layer.

AlN filmXRDSEMXPSC-V characteristic

ZHONG Zhiqin、WANG Zhenzhong、YANG Jie、DAI Liping、WANG Shuya、ZHANG Guojun

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State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, CHN

2010

半导体光子学与技术(英文版)
重庆光电技术研究所

半导体光子学与技术(英文版)

影响因子：0.04
ISSN：1007-0206
年,卷(期)：2010.16(4)
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