Phase change temperature is a key parameter that determines the material properties of phase change films and has a huge impact on the data retention force, thermal stability and power consumption of phase change memory. Accurate measurements of phase change temperature are therefore very important. Currently, the main methods for measuring the phase transition temperature of thin film materials in China and elsewhere are variable temperature X-ray diffraction methods and differential scanning calorimetry. The former has limited measurement accuracy, while the latter is a destructive measurement method. Based on the fact that the optical properties of thin film materials will change greatly before and after a phase change, a new phase change temperature measuring in-strument for thin film materials has been designed. The hardware part includes a high-temperature heating furnace, a sample stage, and an optical path module. The temperature field uniformity of the high-temperature heating fur-nace cavity and the ability to control the temperature module were shown to meet the experimental requirements. Fi-nally, films of typical chalcogenide materials, GeTe and Ge2Sb2Te5 , were studied using the device. The average phase change temperatures of 10 measurements were 212. 7℃ and 145. 4℃, and the standard deviation was 1. 70 and 2. 32, respectively. The measurement results are stable and meet the expected requirements.
关键词
相变存储器/相变温度/高温加热炉/光功率/光功率测量法
Key words
phase change memory/phase change temperature/high temperature heating furnace/optical power/optical power measurement
维普
万方数据