首页|航天印制电路板汽相回流焊工艺的传热机理与等效建模仿真研究

航天印制电路板汽相回流焊工艺的传热机理与等效建模仿真研究

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针对航天领域中电子器件与电路板集成使用的汽相回流焊工艺进行数值模拟研究,对揭示汽相回流炉内的流体状态、明确传热机理、优化焊接参数以及揭示焊接电路板的温度分布具有极其重要的意义.提出一种针对汽相回流焊工艺过程仿真的数值模拟方法,建立汽相回流炉的整体模型,分析了回流炉中流体的运动状态以及与电路板之间的传热机理.随后建立单层蒸汽层的等效仿真模型,将温度计算结果作为其边界条件,通过设置压强差控制温升速率,对带有电路板的等效模型进行计算,预测焊接电路板的温度变化.将设计试验与仿真进行对比,结果表明,等效模型对电路板的温度分布模拟是准确的,对优化参数具有重要意义.
Numerical Simulation Study of Heat Transfer Mechanisms and Equivalent Model in Vapour Phase Soldering Integrated Process for Aerospace Printed Circuit Board
Numerical simulation of the vapour phase soldering process used in the integration of electronic devices and circuit boards in aerospace field is of great significance to revealing the fluid state in the vapor phase reflow oven,clarifying the heat transfer mechanism,optimizing the soldering parameters,and revealing the tem-perature distribution of the soldering circuit boards.A numerical simulation method for the simulation of vapour phase solering process was proposed.The complete model of vapor phase reflow oven was established.The flu-id state in the reflow oven and the heat transfer mechanism between the fluid and the circuit board were ana-lyzed.And the equivalent simulation model of a single steam layer was established by taking the temperature cal-culation results of the complete model as the boundary condition.By setting the pressure difference to control the temperature transfer rate,the equivalent model with circuit board was calculated to predict the temperature change of the soldering circuit board.Finally,design experiments to compare and verify the correctness of the model.The results show that the equivalent model is accurate in simulating the temperature distribution of cir-cuit board,and is of great significance to optimizing the soldering parameters.

vapour phase solderingnumerical simulationheat transfer mechanismsequivalent modeltemper-ature distribution

苏煜、许庆、金梓谦、孟瑛泽、亓婷、张朋

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北京理工大学 宇航学院,北京 100081

北京航天自动控制研究所,北京 100854

汽相回流焊 数值模拟 传热机理 等效模型 温度分布

2025

北京理工大学学报
北京理工大学

北京理工大学学报

北大核心
影响因子:0.609
ISSN:1001-0645
年,卷(期):2025.45(1)