The drain induced barrier lowering effect of the fully depleted SOI MOSFET with graded channel
Purposes—To propose the device structure of a fully depleted silicon-on-insulator metal-oxide-semiconductor field effect transistor(SOI MOSFET)with graded channel,which combines the advantages of SOI MOSFET device structure and graded channel,for the purpose of improving the micro physical performance of MOSFET devices.Methods—A threshold voltage model is established by solving the Poisson equation in the both doping regions.Based on the calculation results,the effects of physical parameters,such as the doping concentration and doping length of the higher do-ping region,the gate-oxide dielectric constant and the silicon film thickness,on the drain induced bar-rier lowering(DIBL)effect are analyzed in detail.Results—DIBL decreases with the increae of doping concentration and the decrease of doping length in the high doping region of the channel,the increase of gate-oxide dielectric constant,and decrease in the thickness of silicon layer.Conclusions—The structure of graded channel can effectively suppress the DIBL.The results not only offer the physical insight into device physics,but also provide the important value for the device design.
graded channelmetal-oxide-semiconductor field effect transistordrain induced bar-rier loweringshort channel effects
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