Electrical properties of RRAM with quantum dot insertion layer
Purposes—To study the effect of the adsorption capacity of nitrogen ions in quantum dot insertion layer on the electrical properties of AlN-based resistive random access memory(RRAM).Methods—The RRAM with single AlN layer and RRAM with stacked AlN/PbS quantum dots are pre-pared.The resistive switching mechanism of the RRAM with stacked AlN/PbS quantum dots is stud-ied by means of material characterization,the characterization of electrical properties of RRAM and the analysis of current conduction mechanism.Results—Compared with the RRAM with single AlN layer,the RRAM with stacked AlN/PbS quantum dots exhibit excellent resistive switching character-istics,such as forming-free characteristics,low power consumption characteristics and excellent sta-bility.Conclusions—The resistive switching process of RRAM is significantly regulated by the inser-tion layer of PbS quantum dots.The introduction of quantum dot insertion layer,the distribution of nitrogen vacancy and the distribution of electric field are the key factors to control the performance of AlN-based RRAM.
resistive random access memoryquantum dot enhancement filmstacked structuresta-bility
万方数据
维普
