Purposes—To study the effect of the adsorption capacity of nitrogen ions in quantum dot insertion layer on the electrical properties of AlN-based resistive random access memory(RRAM).Methods—The RRAM with single AlN layer and RRAM with stacked AlN/PbS quantum dots are pre-pared.The resistive switching mechanism of the RRAM with stacked AlN/PbS quantum dots is stud-ied by means of material characterization,the characterization of electrical properties of RRAM and the analysis of current conduction mechanism.Results—Compared with the RRAM with single AlN layer,the RRAM with stacked AlN/PbS quantum dots exhibit excellent resistive switching character-istics,such as forming-free characteristics,low power consumption characteristics and excellent sta-bility.Conclusions—The resistive switching process of RRAM is significantly regulated by the inser-tion layer of PbS quantum dots.The introduction of quantum dot insertion layer,the distribution of nitrogen vacancy and the distribution of electric field are the key factors to control the performance of AlN-based RRAM.
关键词
阻变存储器/量子点薄膜/叠层结构/稳定性
Key words
resistive random access memory/quantum dot enhancement film/stacked structure/sta-bility
维普
万方数据