ZnS nano thin films were prepared on GaN substrates using pulsed laser deposition tech-nology.The crystallization and cross-sectional structure of the thin films were characterized by XRD and SEM,and the transmission spectra of ZnS nano thin films and the I-V characteristic curves of ZnS/GaN heterojunctions were measured.ZnS nano thin films have a high transmittance in the visible light region,with an average transmittance of over 80％.After annealing,the transmittance increases.The I-V charac-teristic curve indicates that ZnS/GaN forms a heterojunction and has rectification characteristics similar to ordinary diodes.Under forward bias,the current increases with the increase of voltage.The conduction voltage of the heterojunction after annealing treatment decreases.These characteristics indicate that ZnS nano thin films have potential applications in such fields as photodiodes,photodetectors and photovoltaic cells in unmanned aerial vehicle sensors and avionics systems.
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