Effect of High Temperature Annealing on Photoluminescence of Silicon Based Microcavity
The research on nano-silicon is currently a very active direction in the field of luminescence. Its luminescent properties can improve the performance of silicon-based light-emitting devices,achieve integrated silicon-based lighting sources,and break through the technical bottleneck of low light efficiency in future. This paper uses nanosecond pulsed lasers to prepare a cavity structure of honeycomb-shaped monocrystalline silicon arrays by controlling different annealing atmo-spheres (air and oxygen) and annealing times,obtaining corresponding Si-O-Si local states at 630 nm and Si=O local states at 710 nm photoluminescence sources,respectively. To further explain this phenomenon,a model is proposed that localized states compete with quantum confinement effects that induces the formation of a quasi-three-level structure on the surface of silicon materials. This quasi-three-level structure can be stimulated by light under controlled annealing atmo-spheres and annealing times to form a modulated characteristic light-emitting source.
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维普
