用于特殊环境的薄膜应变计的制备与表征
Fabrication And Characterization of Thin Film Strain Gauge for Strain Measurement Under Special Environment
张丛春 1康志鹏 2雷鹏 2闫博2
作者信息
- 1. 上海交通大学微米/纳米加工技术国家重点实验室,上海 200240,China
- 2. 上海交通大学微米/纳米加工技术国家重点实验室,上海 200240,China;上海交通大学电子信息与电气工程学院,上海 200240,China
- 折叠
摘要
使用磁控溅射制备了卡玛合金薄膜应变计,研究了退火温度对薄膜微观结构的影响,测试了薄膜的电学性能以及压阻响应特性,并进行了环境实验.结果表明,随着退火温度升高,薄膜的电阻率逐渐下降,电阻温度系数则逐渐升高,在室温下有最小的电阻温度系数(TCR),约为 59.9×10-6/℃,经过 200℃退火处理的薄膜应变计的应变灵敏度系数(GF)为 2.2,TCR为 64.4×10-6/℃.经历温湿循环、盐雾、霉菌试验后,薄膜的压阻特性变化不大,能耐受海洋特殊环境.
Abstract
RF sputtering is used to create Karma alloy thin film strain gauges on alumina substrates.Karma alloy thin films'changes in e-lectrical characteristics and strain properties at various annealing temperatures are evaluated,and it is determined how annealing tempera-ture affects the surface morphology and crystal structure of Karma alloy thin films.The results demonstrate that as the annealing tempera-ture increases,the resistivity of the Karma alloy thin films gradually decreases,and its temperature coefficient of resistance gradually in-creases.Karma thin film strain gages are discovered to have the lowest TCR of 59.9×10-6/℃under room temperature.After 200℃an-nealing process,the Karma alloy thin films achieve the gage factor of 2.2,and the TCR of 64.4×10-6/℃.The piezoresistive characteristic of the thin film changes slightly after experiments of temperature humidity cycling,salt spray,and molding,it has ability to withstand the harsh conditions of the sea.
关键词
磁控溅射/薄膜应变计/电阻温度系数/应变因子/环境实验Key words
magnetron sputtering/thin-film strain gauge/resistance temperature coefficient/strain factor/environmental experiments引用本文复制引用
出版年
2024
国家科技期刊平台
NSTL
万方数据