Research on simulation of high sensitivity SiC dynamic high temperature pressure sensor
In order to improve the sensitivity of silicon carbide(SiC)dynamic high temperature pressure sensor,the p-type SiC material is used.At the same time,the statics simulation and analysis of the different structure of sensitive unit of the sensor,square film and round film,are carried out by Ansys software,and size of the sensitive chip is designed.Simulation result shows that output sensitivity of the optimized sensor is 14.2 μV/(V·kPa),nonlinear error is less than 1.53％in the range of 100～600 ℃.The dynamic simulation show that the natural frequency of the sensor is 481 kHz,and the sensor can work safely in high frequency environment of 160 kHz.The results lay a theoretical support for further preparation of SiC high temperature pressure sensor.
SiChigh temperature pressure sensorfinite element analysishigh sensitivity
NETL
NSTL
万方数据
维普
