On-chip broadband power divider based on GaAs process
A broadband 3 dB power divider based on GaAs-IPD process is proposed.A wideband miniaturized design is achieved using multi-section cascading and aggregate parameter equivalence method.High isolation performance within the wideband is achieved using an RC series isolation network.The proposed power divider is theoretically analyzed and the design is completed with a centre frequency of 20 GHz and a circuit size of 0.04λ0 × 0.053λ0,with λ0 being the free-space wavelength at the center frequency.After testing,the relative operating bandwidth is 80％,the in-band insertion loss is 0.7 dB and the port isolation is higher than 20 dB.Test results maintain good agreement with the simulation results.
power dividerGaAs processbroadbandintegrated passive device(IPD)
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维普
