Design and performance verification of high temperature resistant structure of Pt film resistive temperature sensor
Aiming at the problem that platinum(Pt)film resistive temperature sensor is difficult to achieve long-term stable measurement in 850 ℃ high temperature environment.Magnetron sputtering method is used to prepare Pt film temperature sensitive layer on 996 alumina(Al2O3)ceramic substrate.By adopting heat processing on Pt film,high temperature resistant surface protection structure to enhance performance of high temperature resistance,and resistance adjustment technology to control resistance precision of the sensor.The Pt film resistive temperature sensors are prepared by MEMS and thick-film technology.The results show that the temperature coefficient of resistance(TCR)for Pt film resistive temperature sensor is(3 851±3)× 10-6 ℃.The resistance value is controlled within 199.92～200.06 Ω at 0 ℃.Thermal response time(τ90)of the sensor from room temperature to 850 ℃ is 15.1 s.The output of the sensor is stable after 100 cycles thermal shock from room temperature to 850 ℃.The resistance drift of the sensor at 0 ℃ is less than 0.5％after 850 ℃ for 1 000 h life assessment.The prepared Pt film resistive temperature sensor can maintain long time and stable measurement at high temperature.The temperature sensor can be widely used in high temperature measurement fields such as automotive exhaust emission and engine health monitoring.
Pt filmtemperature sensortemperature coefficient of resistance(TCR)high-temperature properties
NETL
NSTL
万方数据
维普
