Design for manufacturability of submicron electrode gap using pull-in electrodes
A realization method for submicron electrode gap by using the manufacturability design of pull-in electrode structure is proposed.The movable electrode displacement is pulled by using electrostatic force,ultra narrow gaps beyond the lithography and etching ability are achieved,so that the sensitive electrode gap can be reduced from 1.3 μm to 300 nm.The submicron electrode gap achieved by this method is not sensitive to the process dispersion,and the inconsistency of electrode gap can be reduced by an order of magnitude.Combined with the manufacturability design method of the proposed I2 BAR structure,a complete manufacturability design of MEMS oscillator can be realized.
NETL
NSTL
万方数据
维普
