Based on development needs of miniaturization,low cost and low power consumption of infrared(IR)gas sensor,a complementary metal oxide semiconductor(CMOS)IR light source for non-dispersive IR(NDIR)integrated gas sensor is designed.It uses S-shaped tungsten thin film resistor with unequal interval as heating wires,SiO2 and Si3 N4 multi-layer composite dielectric films as supports to form a micro-hotplate with a suspended membrane,and a CuO and MnO2 nanomaterial composite film as the radiation enhance layer.The thermoelectric coupling simulation is carried out based on COMSOL software to prove the rationality of structure design.The CMOS IR source chip is fabricated by standard CMOS process,deep etching process of silicon and electrostatic fluid dynamics printing technology.The results of the performance test show that the thermal response time of the IR source from room temperature to 469℃ is about 41 ms,the electrical power consumption is only 138 mW,and the temperature distribution in the radiation area is quite uniform.Introducing radiation enhance layer increases the surface specific emissivity by approximately 35%.Test results of the radiation power and radiation intensity of the IR source show that the coating effectively enhances the IR radiation.
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