首页|Pd/Ga2O3/AlGaN/GaN HEMT基氢气传感器研究

Pd/Ga2O3/AlGaN/GaN HEMT基氢气传感器研究

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氢气易燃易爆,因此需要海量快速响应的氢气传感器对加氢站、运输车及氢能源汽车等氢能源各个环节进行预警预报.本文研究了基于贵金属钯(Pd)为栅极的高速二维电子气晶体管(HEMT)型氢气传感器,金属Pd栅极为敏感电极,Ti/Al/Ti/Au为源漏极.结果表明:该晶体管开关比为3.58×107.实验研究了不同厚度Ga2O3 插入层对氢气响应特性的影响规律.随着Ga2O3 插入层的厚度增大,传感器的饱和体积分数明显增大,从1×10-3提高到7×10-3.对于Ga2O3 插入层厚度为10 nm的器件,其综合性能最好,饱和浓度为5×10-3,且具有很高的响应度,1×10-3 时的响应度为4300%.特别地,其响应速度非常快,最快可以2s内完成氢气检测.
Research on hydrogen gas sensors based on Pd/Ga2O3/AlGaN/GaN HEMT
Since H2 gas is easy to fire and explore,large amounts of H2 sensors with fast response are required for the monitoring of early warning and forecasting in all processes of H2 energy,including the H2 refueling station,the transportation vehicle,and the H2 vehicles.Herein,based on precious metal Pd as a gate Pd/Ga2O3/AlGaN/GaN high electro mobility transistor(HEMT)type sensors are investigated.Ti/Al/Ti/Au are used as the source/drain electrodes and the Pd gate is used as sensitive electrode.Results show that on/off ratio of transistor is 3.58×107.With the influence law of various thicknesses of Ga2O3 insertion layer on H2 response characteristics are experimentally investigated.With the thickness increase of the Ga2O3 of insertion layers,the saturation volume significantly inceases from 1×10-3 to 7×10-3.For the device with 10 nm thick of Ga2O3 layer,it has the best overall performances.This sensor has satuation fraction of 5×10-3 and high response value of 4300% at 1×10-3.In particular,its response speed is ultrafast in H2 gas detection and the fastest speed is 2 s.

Ga2O3 filmhydrogen sensorhigh electro mobility transistor(HEMT)selectivity

钟远婷、孙爱发、刘阳泉、钟爱华

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佛山职业技术学院汽车工程学院,广东佛山 528000

深圳大学物理与光电工程学院,广东深圳 518060

氧化镓薄膜 氢气传感器 HEMT 选择性

2024

传感器与微系统
中国电子科技集团公司第四十九研究所

传感器与微系统

CSTPCD北大核心
影响因子:0.61
ISSN:1000-9787
年,卷(期):2024.43(3)
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