Research and fabrication of solar-blind AlGaN UV array detector
Aiming at detection of solar-blind UV band optical signal,1 280 × 1 024/15 μm × 15 μm AlGaN UV array detector is researched and fabricated.The pixel unit adopts PIN mesa structured with common N-sided electrode.The structure,material growth and manufacturing process of the device are introduced,and the photoelectric performance of the device is tested.The results show that the forward turn on voltage of the device is greater than 10 V,the reverse breakdown voltage is greater than 90 V.The dark current of single pixel is about 0.1 fA at 0.5 V bias voltage.The spectral response range is 255～282 nm and the peak wavelength response of 270 nm is about 0.12 A/W at 1 V bias voltage.The device realizes the demonstration of solar-blind UV imaging.
万方数据
维普
