Analysis and simulation of piezoelectric detecting gyroscope in piezoelectric thin film materials
The piezoelectric MEMS gyroscope detecting voltage output amplitude inflencing factors are analyzed theoretically,and a detection gyroscope with microbeam configuration is designed by combining AlN,ZnO and PZT piezoelectirc thin film materials commonly used in MEMS field.The modal and function of gyroscope are simulated and analyzed by using COMSOL finite element software.The results of simulations show that the natural frequency difference between the driving mode and detecting mode of the gyroscope structure is 22 Hz.z-axis angular velocity input can be sensed by gyroscope structure,and ZnO,AlN and PZT gyroscope voltage snsitivities are 2.23μV/(°)/s,2.16μV/(°)/s and 0.79μV/(°)/s,respectively.The voltage sensitivity of AlN and ZnO is higher than that of PZT,and the manufacturability of AlN is better than that of ZnO.Therefore,AlN is the most suitable material for piezoelectric detecting MEMS gyroscope among three piezoelectirc materials.
万方数据
维普
