Failure analysis of strain resistor in silicon piezoresistive pressure sensitive core
Through investigation and localization analysis of internal strain resistor faults in silicon piezoresistive pressure sensitive cores,the sensor failure mechanism caused by strain resistor defects is verified.The detection methods for stimulating strain resistor defects exposing are summarized.Screening scheme for 1200 h constant temperature electrical aging of pressure sensitive cores body is determined.The screening experimental results show that adding 1200 h of room temperature electrical aging can eliminate failed components caused by sensitive core body output drift due to strain resistor defects.
万方数据
维普
