Progress in selectivity improvement research of MOS gas sensors
Poor selectivity has been the main technical bottleneck of metal oxide semiconductor(MOS)sensors that is difficult to overcome.In this paper,the current technical approaches to solve the selectivity problem of MOS sensors are reviewed based on both monolayer and layered structures.The proposed technical approach based on monolayer structure can improve the selectivity of the sensor to a certain extent,but there are some unknowns and limitations in terms of anti-interference ability in the practical application environment.The proposed technical approach based on the layered structure has the characteristics with differences in the response process to the gas,which can provide reliable basis for the sensor to accurately identify the target gas.However,the problems of consistency of the layered structure MOS sensor is difficult to control,the preparation technology is demanding,and the service life is relatively short,still need to be further improved and perfected.
metal oxide semiconductor gas sensorsselectivitytechnology pathways
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维普
