Study on photoelectric characteristics of GaN-based LED chip with different linewidth current barrier layer
Benefiting from its advantages of low power consumption,small size,wide spectral range,LED is widely used in the fields of micro-system such as visible light communication,optoelectronic medical treatment,rapid nondestructive testing,and so on.In order to further improve the luminous efficiency of LED,GaN-based LED is fabricated on the patterned sapphire substrates with different linewidth current barrier layer(CBL)and their photoelectric characteristics are studied.The results show that,under the test current of 120 mA,because CBL makes the effective light emission region of the active layer obtain a larger current density and reduces the parasitic light absorption at the p type electrode(P-Pad).The radiation power and electro-optic conversion efficiency of the LED chip increase monotonically with the increase of the linewidth of the CBL.When the linewidth of the CBL is designed to be 13 μm,the radiation power and electro-optic conversion efficiency reach the maximum.The forward voltage(VF)increases slightly with the increase of CBL linewidth indicating that the CBL layer of insulation increases the series resistance.This study provides a new idea for the selection of CBL linewidth,which can effectively improve the luminous efficiency of LED.
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